Abstract
Time-resolved and temperature-dependent photoluminescence (PL) spectroscopy of ternary compound copper indium disulfide (CuInS2, or CIS) core materials, CIS/ZnS coreshells, and quaternary compound ZnCuInS2 (ZnCIS) revealed their optical properties with spectral, temporal, and thermal characteristics, which were closely linked to surface-related recombination, and shallow or deep defect-related donor-acceptor transitions. The PL peaks of semiconductor nanocrystals (SNCs) with sizes near Bohr radius displayed at ∼775 nm for CIS, ∼605 nm for CIS/ZnS, and ∼611 nm for ZnCIS. The spectral blue shift and spectral narrowing with CIS/ZnS and ZnCIS are assigned to the increased spatial confinement and surface regularity with the etching of core materials. Both the shorter lifetime at surface-trapped states or interface states and the longer lifetime at intrinsic defect-related states of CIS, CIS/ZnS, and ZnCIS SNCs were widely distributed across the entire PL spectral region. The surface or interface-trapped electrons were thermally active even at low temperatures, but the electrons at intrinsic defect-related states were relatively stable, which was attributable to the strong Coulomb energy between the charge carriers.
| Original language | English |
|---|---|
| Article number | 094310 |
| Journal | Journal of Applied Physics |
| Volume | 114 |
| Issue number | 9 |
| DOIs | |
| State | Published - 7 Sep 2013 |
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Time-resolved and temperature-dependent photoluminescence of ternary and quaternary nanocrystals of CuInS2 with ZnS capping and cation exchange. / Seo, Jaetae; Raut, Sangram Limbaji; Abdel-Fattah, Mahmoud; Rice, Quinton; Tabibi, Bagher; Rich, Ryan; Fudala, Rafal; Gryczynski, Ignacy; Gryczynski, Zygmunt; Kim, Wan Joong; Jung, Sungsoo; Hyun, Ruh.
In: Journal of Applied Physics, Vol. 114, No. 9, 094310, 07.09.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Time-resolved and temperature-dependent photoluminescence of ternary and quaternary nanocrystals of CuInS2 with ZnS capping and cation exchange
AU - Seo, Jaetae
AU - Raut, Sangram Limbaji
AU - Abdel-Fattah, Mahmoud
AU - Rice, Quinton
AU - Tabibi, Bagher
AU - Rich, Ryan
AU - Fudala, Rafal
AU - Gryczynski, Ignacy
AU - Gryczynski, Zygmunt
AU - Kim, Wan Joong
AU - Jung, Sungsoo
AU - Hyun, Ruh
PY - 2013/9/7
Y1 - 2013/9/7
N2 - Time-resolved and temperature-dependent photoluminescence (PL) spectroscopy of ternary compound copper indium disulfide (CuInS2, or CIS) core materials, CIS/ZnS coreshells, and quaternary compound ZnCuInS2 (ZnCIS) revealed their optical properties with spectral, temporal, and thermal characteristics, which were closely linked to surface-related recombination, and shallow or deep defect-related donor-acceptor transitions. The PL peaks of semiconductor nanocrystals (SNCs) with sizes near Bohr radius displayed at ∼775 nm for CIS, ∼605 nm for CIS/ZnS, and ∼611 nm for ZnCIS. The spectral blue shift and spectral narrowing with CIS/ZnS and ZnCIS are assigned to the increased spatial confinement and surface regularity with the etching of core materials. Both the shorter lifetime at surface-trapped states or interface states and the longer lifetime at intrinsic defect-related states of CIS, CIS/ZnS, and ZnCIS SNCs were widely distributed across the entire PL spectral region. The surface or interface-trapped electrons were thermally active even at low temperatures, but the electrons at intrinsic defect-related states were relatively stable, which was attributable to the strong Coulomb energy between the charge carriers.
AB - Time-resolved and temperature-dependent photoluminescence (PL) spectroscopy of ternary compound copper indium disulfide (CuInS2, or CIS) core materials, CIS/ZnS coreshells, and quaternary compound ZnCuInS2 (ZnCIS) revealed their optical properties with spectral, temporal, and thermal characteristics, which were closely linked to surface-related recombination, and shallow or deep defect-related donor-acceptor transitions. The PL peaks of semiconductor nanocrystals (SNCs) with sizes near Bohr radius displayed at ∼775 nm for CIS, ∼605 nm for CIS/ZnS, and ∼611 nm for ZnCIS. The spectral blue shift and spectral narrowing with CIS/ZnS and ZnCIS are assigned to the increased spatial confinement and surface regularity with the etching of core materials. Both the shorter lifetime at surface-trapped states or interface states and the longer lifetime at intrinsic defect-related states of CIS, CIS/ZnS, and ZnCIS SNCs were widely distributed across the entire PL spectral region. The surface or interface-trapped electrons were thermally active even at low temperatures, but the electrons at intrinsic defect-related states were relatively stable, which was attributable to the strong Coulomb energy between the charge carriers.
UR - http://www.scopus.com/inward/record.url?scp=84884948710&partnerID=8YFLogxK
U2 - 10.1063/1.4820269
DO - 10.1063/1.4820269
M3 - Article
AN - SCOPUS:84884948710
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 094310
ER -