Mechanism of light emission in low energy ion implanted silicon

Zygmunt Gryczynski, A. K. Singh, A. Neogi, Seong Y. Park, Moon Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A silicon wafer implanted with a single low energy (42 keV) silicon ion beam results in strong luminescence at room temperature. The implantation results in the formation of various luminescent defect centers within the crystalline and polymorphous regions of the wafer. The resulting luminescence centers (LC) are mapped using fluorescence lifetime imaging microscopy (FLIM). The emission from the ion-implanted wafer shows multiple PL peaks ranging from the UV to the visible; these emissions originate from bound excitonic states in crystal defects and interfacial states between crystalline/amorphous silicon and impurities within the wafer. The LCs are created from defects and impurities within the wafer and not from nanoparticles.

Original languageEnglish
Pages (from-to)2621-2624
Number of pages4
JournalJournal of Luminescence
Volume131
Issue number12
DOIs
StatePublished - 1 Dec 2011

Fingerprint

Light emission
Silicon
light emission
Luminescence
wafers
Impurities
Ions
Crystalline materials
Light
Defects
Crystal defects
silicon
Amorphous silicon
Silicon wafers
Ion beams
Microscopic examination
ions
Fluorescence
Optical Imaging
Nanoparticles

Keywords

  • Defect bound exciton
  • Light emitting silicon
  • Luminescence center

Cite this

Gryczynski, Zygmunt ; Singh, A. K. ; Neogi, A. ; Park, Seong Y. ; Kim, Moon. / Mechanism of light emission in low energy ion implanted silicon. In: Journal of Luminescence. 2011 ; Vol. 131, No. 12. pp. 2621-2624.
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Mechanism of light emission in low energy ion implanted silicon. / Gryczynski, Zygmunt; Singh, A. K.; Neogi, A.; Park, Seong Y.; Kim, Moon.

In: Journal of Luminescence, Vol. 131, No. 12, 01.12.2011, p. 2621-2624.

Research output: Contribution to journalArticle

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