Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters

Akhilesh K. Singh, Karol G. Gryczynski, Floyd D. McDaniel, Seong Y. Park, Moon Kim, Arup Neogi

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.

Original languageEnglish
Article number102201
JournalApplied Physics Express
Volume3
Issue number10
DOIs
StatePublished - Oct 2010

Fingerprint Dive into the research topics of 'Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters'. Together they form a unique fingerprint.

  • Cite this