Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters

Akhilesh K. Singh; Karol G. Gryczynski; Floyd D. McDaniel; Seong Y. Park; Moon Kim; Arup Neogi

doi:10.1143/APEX.3.102201

Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters

Akhilesh K. Singh, Karol G. Gryczynski, Floyd D. McDaniel, Seong Y. Park, Moon Kim, Arup Neogi

Microbiology, Immunology & Genetics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.

Original language	English
Article number	102201
Journal	Applied Physics Express
Volume	3
Issue number	10
DOIs	https://doi.org/10.1143/APEX.3.102201
State	Published - Oct 2010

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title = "Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters",

abstract = "Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.",

author = "Singh, {Akhilesh K.} and Gryczynski, {Karol G.} and McDaniel, {Floyd D.} and Park, {Seong Y.} and Moon Kim and Arup Neogi",

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doi = "10.1143/APEX.3.102201",

language = "English",

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AU - Singh, Akhilesh K.

AU - Gryczynski, Karol G.

AU - McDaniel, Floyd D.

AU - Park, Seong Y.

AU - Kim, Moon

AU - Neogi, Arup

PY - 2010/10

Y1 - 2010/10

N2 - Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.

AB - Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.

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U2 - 10.1143/APEX.3.102201

DO - 10.1143/APEX.3.102201

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VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

M1 - 102201

ER -

Localized surface plasmon polariton enhanced radiative recombination in ion-implanted silicon emitters

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