Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Zygmunt Gryczynski, Padma Rekha Vemuri, Ian Watson, Arup Neogi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

Original languageEnglish
Article number121905
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - 19 Sep 2011

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