Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Zygmunt Gryczynski; Padma Rekha Vemuri; Ian Watson; Arup Neogi

doi:10.1063/1.3640492

Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Zygmunt Gryczynski, Padma Rekha Vemuri, Ian Watson, Arup Neogi

Microbiology, Immunology & Genetics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

Original language	English
Article number	121905
Journal	Applied Physics Letters
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.3640492
State	Published - 19 Sep 2011

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abstract = "The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.",

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AU - Neogi, Arup

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