Abstract
The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
| Original language | English |
|---|---|
| Article number | 121905 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 12 |
| DOIs | |
| State | Published - 19 Sep 2011 |
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Gryczynski, Z., Rekha Vemuri, P., Watson, I., & Neogi, A. (2011). Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99(12), [121905]. https://doi.org/10.1063/1.3640492