Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Zygmunt Gryczynski, Padma Rekha Vemuri, Ian Watson, Arup Neogi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

Original languageEnglish
Article number121905
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - 19 Sep 2011

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quantum wells
electric fields
thin films
polaritons
energy
electrostatics
gold
shift
metals

Cite this

@article{5a100073abb94f8d88225d636dc67187,
title = "Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells",
abstract = "The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.",
author = "Zygmunt Gryczynski and {Rekha Vemuri}, Padma and Ian Watson and Arup Neogi",
year = "2011",
month = "9",
day = "19",
doi = "10.1063/1.3640492",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "12",

}

Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. / Gryczynski, Zygmunt; Rekha Vemuri, Padma; Watson, Ian; Neogi, Arup.

In: Applied Physics Letters, Vol. 99, No. 12, 121905, 19.09.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

AU - Gryczynski, Zygmunt

AU - Rekha Vemuri, Padma

AU - Watson, Ian

AU - Neogi, Arup

PY - 2011/9/19

Y1 - 2011/9/19

N2 - The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

AB - The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

UR - http://www.scopus.com/inward/record.url?scp=80053417621&partnerID=8YFLogxK

U2 - 10.1063/1.3640492

DO - 10.1063/1.3640492

M3 - Article

AN - SCOPUS:80053417621

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121905

ER -