TY - JOUR
T1 - Defect-mediated spontaneous emission enhancement of plasmon-coupled CuInS2 and CuInS2/ZnS
AU - Rice, Quinton
AU - Raut, Sangram
AU - Chib, Rahul
AU - Hayes, Anderson
AU - Gryczynski, Zygmunt
AU - Gryczynski, Ignacy
AU - Kim, Young Kuk
AU - Tabibi, Bagher
AU - Seo, Jaetae
N1 - Funding Information:
The work at HU was supported by the National Science Foundation (NSF) HRD 1137747 and W911NF-11-1-0177. The work at TCU and UNT Health Science Center was supported by the National Institutes of Health (NIH) grant R01EB12003 (Z.G) and National Science Foundation (NSF) grant CBET-1264608 (I.G).
Publisher Copyright:
© 2016 Optical Society of America.
PY - 2016
Y1 - 2016
N2 - The studies of plasmon-coupled excitons at the surface- /interface-, shallow-, and deep-trapped states of copper-indium-disulfide (CIS) with/without zinc-sulfide (ZnS) shell revealed the defect-mediated spontaneous emission enhancement. The PL enhancement with spectral blue-shift of plasmon-coupled excitons in CIS quantum dots (QDs) indicates the large reduction of nonradiative decay at the surface- and shallow-trapped states with strong spectral overlapping. The PL enhancement with spectral red-shift of plasmon-coupled excitons in CIS/ZnS QDs is accredited to the defect-mediated PL enhancement by the higher fractional amplitude at the interface-trapped state around the longer spectral region. The spontaneous emission enhancement of plasmoncoupled CIS QDs were ~2.1, ~2.2, and ~2.8-folds compared to the decay rates of CIS, and those of plasmon-coupled CIS/ZnS QDs were ~24.1, ~32.8, and ~24.9-folds compared to the decay rates of CIS/ZnS at shorter, intermediate, and longer spectral regions due to relatively stable charge carriers and close to the surface plasmon resonance. The PL enhancements of plasmon-coupled CIS at room temperature and 6 K were two-fold and three-fold compared to the integrated CIS PLs, and the PL enhancements of plasmon-coupled CIS/ZnS at room temperature and 6 K were five-fold and eight-fold compared to the integrated CIS/ZnS PLs. The large PL enhancement is attributable to the plasmon-exciton coupling through Coulomb interaction and the local field enhancement. The larger PL enhancement of plasmon-coupled CIS/ZnS compared to that of plasmoncoupled CIS is accredited to the larger spontaneous emission enhancement.
AB - The studies of plasmon-coupled excitons at the surface- /interface-, shallow-, and deep-trapped states of copper-indium-disulfide (CIS) with/without zinc-sulfide (ZnS) shell revealed the defect-mediated spontaneous emission enhancement. The PL enhancement with spectral blue-shift of plasmon-coupled excitons in CIS quantum dots (QDs) indicates the large reduction of nonradiative decay at the surface- and shallow-trapped states with strong spectral overlapping. The PL enhancement with spectral red-shift of plasmon-coupled excitons in CIS/ZnS QDs is accredited to the defect-mediated PL enhancement by the higher fractional amplitude at the interface-trapped state around the longer spectral region. The spontaneous emission enhancement of plasmoncoupled CIS QDs were ~2.1, ~2.2, and ~2.8-folds compared to the decay rates of CIS, and those of plasmon-coupled CIS/ZnS QDs were ~24.1, ~32.8, and ~24.9-folds compared to the decay rates of CIS/ZnS at shorter, intermediate, and longer spectral regions due to relatively stable charge carriers and close to the surface plasmon resonance. The PL enhancements of plasmon-coupled CIS at room temperature and 6 K were two-fold and three-fold compared to the integrated CIS PLs, and the PL enhancements of plasmon-coupled CIS/ZnS at room temperature and 6 K were five-fold and eight-fold compared to the integrated CIS/ZnS PLs. The large PL enhancement is attributable to the plasmon-exciton coupling through Coulomb interaction and the local field enhancement. The larger PL enhancement of plasmon-coupled CIS/ZnS compared to that of plasmoncoupled CIS is accredited to the larger spontaneous emission enhancement.
UR - http://www.scopus.com/inward/record.url?scp=84957564200&partnerID=8YFLogxK
U2 - 10.1364/OME.6.000566
DO - 10.1364/OME.6.000566
M3 - Article
AN - SCOPUS:84957564200
SN - 2159-3930
VL - 6
SP - 566
EP - 577
JO - Optical Materials Express
JF - Optical Materials Express
IS - 2
ER -