Broad band light emission from Ag-ion implanted silicon nanocrystals

Akhilesh K. Singh; Karol G. Gryczynski; Seong Y. Park; Moon Kim; Arup Neogi

doi:10.1016/j.ssc.2011.07.013

Broad band light emission from Ag-ion implanted silicon nanocrystals

Akhilesh K. Singh, Karol G. Gryczynski, Seong Y. Park, Moon Kim, Arup Neogi

Microbiology, Immunology & Genetics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Silicon nanoparticles formed using low energy (<50 keV) silver ion implantation in crystalline Si exhibit broad band light emission from ultraviolet (UV) to green. The formation of nanoparticles is confirmed using high resolution electron microscopy (HRTEM) and the resulting microscopy is used to obtain the size distribution of Si nanoparticles. Photoluminescence (PL) spectra were observed in the range of the UV to the green. The origin of emission is most likely from highly localized defects at the Si/SiO2 which is further confirmed from Photoluminescence Excitation (PLE) and effective mass theory estimation.

Original language	English
Pages (from-to)	1405-1409
Number of pages	5
Journal	Solid State Communications
Volume	151
Issue number	20
DOIs	https://doi.org/10.1016/j.ssc.2011.07.013
State	Published - Oct 2011

Keywords

D. Photoluminescence
D. Plasmonics
D. Silicon photonics
E. Ion implantation

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10.1016/j.ssc.2011.07.013

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title = "Broad band light emission from Ag-ion implanted silicon nanocrystals",

abstract = "Silicon nanoparticles formed using low energy (<50 keV) silver ion implantation in crystalline Si exhibit broad band light emission from ultraviolet (UV) to green. The formation of nanoparticles is confirmed using high resolution electron microscopy (HRTEM) and the resulting microscopy is used to obtain the size distribution of Si nanoparticles. Photoluminescence (PL) spectra were observed in the range of the UV to the green. The origin of emission is most likely from highly localized defects at the Si/SiO2 which is further confirmed from Photoluminescence Excitation (PLE) and effective mass theory estimation.",

keywords = "D. Photoluminescence, D. Plasmonics, D. Silicon photonics, E. Ion implantation",

author = "Singh, {Akhilesh K.} and Gryczynski, {Karol G.} and Park, {Seong Y.} and Moon Kim and Arup Neogi",

year = "2011",

month = oct,

doi = "10.1016/j.ssc.2011.07.013",

language = "English",

volume = "151",

pages = "1405--1409",

journal = "Solid State Communications",

issn = "0038-1098",

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TY - JOUR

T1 - Broad band light emission from Ag-ion implanted silicon nanocrystals

AU - Singh, Akhilesh K.

AU - Gryczynski, Karol G.

AU - Park, Seong Y.

AU - Kim, Moon

AU - Neogi, Arup

PY - 2011/10

Y1 - 2011/10

N2 - Silicon nanoparticles formed using low energy (<50 keV) silver ion implantation in crystalline Si exhibit broad band light emission from ultraviolet (UV) to green. The formation of nanoparticles is confirmed using high resolution electron microscopy (HRTEM) and the resulting microscopy is used to obtain the size distribution of Si nanoparticles. Photoluminescence (PL) spectra were observed in the range of the UV to the green. The origin of emission is most likely from highly localized defects at the Si/SiO2 which is further confirmed from Photoluminescence Excitation (PLE) and effective mass theory estimation.

AB - Silicon nanoparticles formed using low energy (<50 keV) silver ion implantation in crystalline Si exhibit broad band light emission from ultraviolet (UV) to green. The formation of nanoparticles is confirmed using high resolution electron microscopy (HRTEM) and the resulting microscopy is used to obtain the size distribution of Si nanoparticles. Photoluminescence (PL) spectra were observed in the range of the UV to the green. The origin of emission is most likely from highly localized defects at the Si/SiO2 which is further confirmed from Photoluminescence Excitation (PLE) and effective mass theory estimation.

KW - D. Photoluminescence

KW - D. Plasmonics

KW - D. Silicon photonics

KW - E. Ion implantation

UR - http://www.scopus.com/inward/record.url?scp=80052269734&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2011.07.013

DO - 10.1016/j.ssc.2011.07.013

M3 - Article

AN - SCOPUS:80052269734

SN - 0038-1098

VL - 151

SP - 1405

EP - 1409

JO - Solid State Communications

JF - Solid State Communications

IS - 20

ER -

Broad band light emission from Ag-ion implanted silicon nanocrystals

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Keywords

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